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| 2SK2939(L),2SK2939(S) Silicon N Channel MOS FET High Speed Power Switching ADE-208-562D (Z) 5th. Edition Jun 1998 Features * Low on-resistance R DS =0.020 typ. * High speed switching * 4V gate drive device can be driven from 5V source Outline LDPAK 4 4 D G 1 2 1 2 3 3 S 1. Gate 2. Drain 3. Source 4. Drain 2SK2939(L),2SK2939(S) Absolute Maximum Ratings (Ta = 25C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 20 35 140 35 35 105 50 150 -55 to +150 Unit V V A A A A mJ W C C EAR Pch Tch Tstg 1. PW 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Tch = 25C, Rg 50 2 2SK2939(L),2SK2939(S) Electrical Characteristics (Ta = 25C) Item Symbol Min 60 20 -- -- 1.5 -- -- 14 -- -- -- -- -- -- -- -- -- Typ -- -- -- -- -- 0.020 0.032 23 1100 540 200 15 180 175 195 0.95 40 Max -- -- 10 10 2.5 0.026 0.050 -- -- -- -- -- -- -- -- -- -- Unit V V A A V S pF pF pF ns ns ns ns V ns I F = 35A, VGS = 0 I F = 35A, VGS = 0 diF/ dt =50A/s Test Conditions I D = 10mA, VGS = 0 I G = 100A, VDS = 0 VGS = 16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 15A, VGS = 10VNote4 I D = 15A, VGS = 4V Note4 I D = 15A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 15A, VGS = 10V RL = 2 Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source leak current Zero gate voltege drain current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body-drain diode forward voltage Body-drain diode reverse recovery time Note: 4. Pulse test I GSS I DSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK2939(L),2SK2939(S) Main Characteristics Power vs. Temperature Derating 80 Pch (W) I D (A) Maximum Safe Operation Area 200 100 10 0 10 PW D C O s 60 50 20 10 5 2 1 0.5 Ta = 25 C 1 = 10 m s( s s m Drain Current Channel Dissipation 1s n tio ra pe 40 ho t) (T c= C 25 ) 20 Operation in this area is limited by R DS(on) 0 50 100 150 200 0.2 0.1 0.3 1 3 10 30 (V) DS 100 Case Temperature Tc (C) Drain to Source Voltage V Typical Output Characteristics 50 10 V 6V 5V 4.5 V Pulse Test 4V I D (A) Typical Transfer Characteristics 50 V DS = 10 V Pulse Test 40 I D (A) 40 30 3.5 V 20 VGS = 3 V 30 Tc = 75C 25C 20 -25C Drain Current 10 Drain Current 10 0 2 4 6 Drain to Source Voltage V 8 (V) DS 10 0 1 2 3 Gate to Source Voltage V 4 (V) GS 5 4 2SK2939(L),2SK2939(S) Drain to Source Saturation Voltage vs. Gate to Source Voltage Pulse Test 0.8 Static Drain to Source on State Resistance vs. Drain Current Pulse Test 0.2 1.0 0.5 0.6 I D = 20A 10 A 0.2 5A 0 4 8 12 16 20 Drain to Source On State Resistance R DS(on) (W) Drain to Source Saturation Voltage V DS(on) (V) 0.1 0.4 0.05 VGS = 4 V 10 V 0.02 0.01 0.1 0.3 1 3 10 30 100 Gate to Source Voltage V GS (V) Drain Current I D (A) Static Drain to Source on State Resistance R DS(on) ( W) Forward Transfer Admittance |y fs | (S) Static Drain to Source on State Resistance vs. Temperature 0.10 Pulse Test 0.08 50 20 10 5 2 1 0.5 0.1 Forward Transfer Admittance vs. Drain Current Tc = -25 C 25 C 75 C 0.06 V GS = 4 V 20 A 5,10 A 0.04 0.02 0 -40 10 V 5, 10,20 A V DS = 10 V Pulse Test 0.3 1 3 10 30 Drain Current I D (A) 100 0 40 80 Case Temperature 120 160 Tc (C) 5 2SK2939(L),2SK2939(S) Body-Drain Diode Reverse Recovery Time di / dt = 50 A / s V GS = 0, Ta = 25 C Typical Capacitance vs. Drain to Source Voltage 1000 5000 2000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) Ciss 1000 500 Coss 200 100 50 20 10 VGS = 0 f = 1 MHz 0 10 20 30 40 50 Crss 200 100 50 20 10 0.1 0.3 1 3 10 30 100 Reverse Drain Current I DR (A) Drain to Source Voltage V DS (V) Dynamic Input Characteristics Switching Characteristics V DS (V) I D = 35 A V DD = 50 V 25 V 10 V V GS (V) 100 20 1000 80 16 Switching Time t (ns) 300 100 30 10 3 1 0.1 t d(off) tf tr t d(on) V GS = 10 V, V DD = 3 0 V PW = 5 s, duty < 1 % 0.3 1 3 10 30 Drain Current I D (A) 100 Drain to Source Voltage 60 V DS V GS 40 12 8 20 V DD = 50 V 25 V 10 V 20 40 60 80 Gate Charge Qg (nc) 4 0 100 0 6 Gate to Source Voltage 2SK2939(L),2SK2939(S) Reverse Drain Current vs. Source to Drain Voltage Repetitive Avalanche Energy E AR (mJ) Maximum Avalanche Energy vs. Channel Temperature Derating 125 I AP = 35 A V DD = 25 V duty < 0.1 % Rg > 50 W 50 Reverse Drain Current I DR (A) 40 10 V 5V 100 30 V GS = 0, -5 V 75 20 50 10 Pluse Test 0 0.4 0.8 1.2 1.6 V SD (V) 2.0 Source to Drain Voltage 25 0 25 50 75 100 125 150 Channel Temperature Tch (C) Avalanche Test Circuit EAR = Avalanche Waveform 1 2 * L * I AP * 2 VDSS VDSS - V DD V DS Monitor L I AP Monitor V (BR)DSS I AP VDD ID V DS Rg Vin 15 V D. U. T 50W 0 VDD 7 2SK2939(L),2SK2939(S) Normalized Transient Thermal Impedance vs. Pulse Width 3 Normalized Transient Thermal Impedance g s (t) Tc = 25C 1 D=1 0.5 0.3 0.2 0.1 0.1 0.05 q ch - c(t) = g s (t) * q ch - c q ch - c = 2.5 C/W, Tc = 25 C PDM PW T 0.03 0.02 1 lse 0.0 t pu o h 1s D= PW T 0.01 10 100 1m 100 m 10 m Pulse Width PW (S) 1 10 Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50W V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 8 2SK2939(L),2SK2939(S) Package Dimentions Unit: mm (1.4) 10.2 0.3 4.44 0.2 1.3 0.2 8.6 0.3 10.0 +0.3 -0.5 11.3 0.5 (1.4) 10.2 0.3 4.44 0.2 1.3 0.2 (1.5) 11.0 0.5 (1.5) 0.76 0.1 (1.5) 8.6 0.3 10.0 +0.3 -0.5 1.2 0.2 0.86 +0.2 -0.1 1.27 0.2 2.59 0.2 0.1 +0.2 -0.1 3.0 +0.3 -0.5 1.27 0.2 1.2 0.2 2.54 0.5 0.86 +0.2 -0.1 2.54 0.5 2.59 0.2 0.4 0.1 0.4 0.1 2.54 0.5 2.54 0.5 L type S type Hitachi Code EIAJ JEDEC LDPAK -- -- 9 Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi's or any third party's patent, copyright, trademark, or other intellectual property rights for information contained in this document. Hitachi bears no responsibility for problems that may arise with third party's rights, including intellectual property rights, in connection with use of the information contained in this document. 2. Products and product specifications may be subject to change without notice. Confirm that you have received the latest product standards or specifications before final design, purchase or use. 3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However, contact Hitachi's sales office before using the product in an application that demands especially high quality and reliability or where its failure or malfunction may directly threaten human life or cause risk of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation, traffic, safety equipment or medical equipment for life support. 4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly for maximum rating, operating supply voltage range, heat radiation characteristics, installation conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable failure rates or failure modes in semiconductor devices and employ systemic measures such as failsafes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other consequential damage due to operation of the Hitachi product. 5. This product is not designed to be radiation resistant. 6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without written approval from Hitachi. 7. Contact Hitachi's sales office for any questions regarding this document or Hitachi semiconductor products. Hitachi, Ltd. Semiconductor & Integrated Circuits. Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109 URL NorthAmerica : http:semiconductor.hitachi.com/ Europe : http://www.hitachi-eu.com/hel/ecg Asia (Singapore) : http://www.has.hitachi.com.sg/grp3/sicd/index.htm Asia (Taiwan) : http://www.hitachi.com.tw/E/Product/SICD_Frame.htm Asia (HongKong) : http://www.hitachi.com.hk/eng/bo/grp3/index.htm Japan : http://www.hitachi.co.jp/Sicd/indx.htm For further information write to: Hitachi Semiconductor (America) Inc. 179 East Tasman Drive, San Jose,CA 95134 Tel: <1> (408) 433-1990 Fax: <1>(408) 433-0223 Hitachi Europe GmbH Electronic components Group Dornacher Strae 3 D-85622 Feldkirchen, Munich Germany Tel: <49> (89) 9 9180-0 Fax: <49> (89) 9 29 30 00 Hitachi Europe Ltd. Electronic Components Group. Whitebrook Park Lower Cookham Road Maidenhead Berkshire SL6 8YA, United Kingdom Tel: <44> (1628) 585000 Fax: <44> (1628) 778322 Hitachi Asia Pte. Ltd. 16 Collyer Quay #20-00 Hitachi Tower Singapore 049318 Tel: 535-2100 Fax: 535-1533 Hitachi Asia Ltd. Taipei Branch Office 3F, Hung Kuo Building. No.167, Tun-Hwa North Road, Taipei (105) Tel: <886> (2) 2718-3666 Fax: <886> (2) 2718-8180 Hitachi Asia (Hong Kong) Ltd. Group III (Electronic Components) 7/F., North Tower, World Finance Centre, Harbour City, Canton Road, Tsim Sha Tsui, Kowloon, Hong Kong Tel: <852> (2) 735 9218 Fax: <852> (2) 730 0281 Telex: 40815 HITEC HX Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan. |
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